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Solid State Scientific Corporation (SSSC) in cooperation with its partners is currently developing an imaging LADAR receiver using a novel epitaxial layer transfer (ELT) integration technique developed by AFRL/SNHC. ELTis an alternative to indium bump bonding for integrating hybrid components to electronic circuitry.
ELT allows the integration of an entire, unprocessed, epitaxial structured optoelectronic wafer (LED, LASER, Photodiode, etc.) with any application specific circuit or array of circuits. This process is virtually alignment-free. Subsequently, devices or circuits are fabricated directly on the host wafer using standard photolithography. The transferred epilayer is thin and semi-transparent, allowing precise alignment of arbitrarily small optical devices to the host circuit, limited only by lithographic constraints. The formed structures (devices) are individually isolated thereby reducing all resistive, capacitive and inductive parasitics between the devices (passive or active) and the circuit. The resulting integrated subsystem is robust, and any potential strain due to differences in thermal coefficients is minimized. Figure 1 illustrates the basic concept. |
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